Demonstration of an InAsBi photodiode operating in the MWIR

Ian C. Sandall; Faebian Bastiman; Ben White; Robert D. Richards; John David; Chee Hing Tan

doi:10.1117/12.2069697

31 October 2014 Demonstration of an InAsBi photodiode operating in the MWIR

Ian C. Sandall, Faebian Bastiman, Ben White, Robert D. Richards, John David, Chee Hing Tan

Proceedings Volume 9254, Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III; 92540Q (2014) https://doi.org/10.1117/12.2069697
Event: SPIE Security + Defence, 2014, Amsterdam, Netherlands

Abstract

An InAsBi photodiode has been grown, fabricated and characterized to evaluate its performance in the MWIR region of the spectrum. Spectral response from the diode has been obtained up to a diode temperature of 225 K. At this temperature the diode has a cut off wavelength of 3.95 μm, compared to 3.41 μm in a reference InAs diode, indicating that Bismuth has been successfully incorporated to reduce the band gap of InAs by 75 meV. Similar band gap reduction was deduced from the cut off wavelength comparison at 77 K. From the dark current data, R0A values of 590 MΩcm² and 70 MΩcm² at temperatures of 77 and 290 K respectively, were obtained in our InAsBi photodiode.

Citation Download Citation

Ian C. Sandall, Faebian Bastiman, Ben White, Robert D. Richards, John David, and Chee Hing Tan "Demonstration of an InAsBi photodiode operating in the MWIR", Proc. SPIE 9254, Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III, 92540Q (31 October 2014); https://doi.org/10.1117/12.2069697

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