3 February 2015 A 3000W 808nm QCW G-stack semiconductor laser array
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Proceedings Volume 9255, XX International Symposium on High-Power Laser Systems and Applications 2014; 92550W (2015) https://doi.org/10.1117/12.2065663
Event: XX International Symposium on High Power Laser Systems and Applications, 2014, Chengdu, China
Abstract
With the improvement of output power, efficiency and reliability, high power semiconductor lasers have been applied in more and more fields. In this paper, a conduction-cooled, high peak output power semiconductor laser array was studied and developed. The structure and operation parameters of G-Stack semiconductor laser array were designed and optimized using finite element method (FEM). A Quasi-continuous-wave (QCW) conduction-cooled G-Stack semiconductor laser array with a narrow spectrum width was fabricated successfully.
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Pu Zhang, Pu Zhang, Jingwei Wang, Jingwei Wang, Dong Hou, Dong Hou, Zhenfu Wang, Zhenfu Wang, Lingling Xiong, Lingling Xiong, Hui Liu, Hui Liu, Zhiqiang Nie, Zhiqiang Nie, Xingsheng Liu, Xingsheng Liu, "A 3000W 808nm QCW G-stack semiconductor laser array", Proc. SPIE 9255, XX International Symposium on High-Power Laser Systems and Applications 2014, 92550W (3 February 2015); doi: 10.1117/12.2065663; https://doi.org/10.1117/12.2065663
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