3 February 2015 Research on 9xx nm diode laser for direct and pumping applications
Author Affiliations +
Proceedings Volume 9255, XX International Symposium on High-Power Laser Systems and Applications 2014; 92550Y (2015) https://doi.org/10.1117/12.2072840
Event: XX International Symposium on High Power Laser Systems and Applications, 2014, Chengdu, China
High-power laser bars and single emitters have proven as attractive light sources for many industrial applications such as direct material processing or as pump sources for solid state and fiber-lasers. There is also a great interest in quasi-CW laser bars for high-energy projects. These applications require a continuous improvement of laser diodes for reliable optical output powers, high electrical-to-optical efficiencies, brightness and costs. In this paper JENOPTIK presents an overview of recent research for highly efficient CW and quasi-CW laser devices emitting in a wide wavelength range between 880 nm and 1020 nm. The last research results concern the 9xx single emitters and laser arrays. The 9xx nm 12 W single emitters and 976 nm 55 W laser arrays have efficiencies above 65%. New life time tests for single emitter devices currently exceed 1300 hours of reliable operation at room temperature and over 1500 hours at 45°C. Because of the small far field distribution of the optical power, the high output power and the small near field the 55 W arrays show a brightness of 75 MW x cm-2sr-1 with 95% power content. The technology for new generation 940 nm high fill-factor bars has been currently extended to emission wavelengths of 976 nm and 1020 nm with excellent results: 200 W output power with 63% efficiency using passive cooling. The innovative design of the laser structure enables, moreover, the realization of 500 W 880 nm quasi-CW laser bars with wall-plug efficiencies of 55% and a narrow fast-axis divergence angle of 40° (95% power content).
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Sebastian, J. Sebastian, R. Hülsewede, R. Hülsewede, A. Pietrzak, A. Pietrzak, M. Zorn, M. Zorn, M. Wölz, M. Wölz, J. Meusel, J. Meusel, M. Schröder, M. Schröder, Th. Wittschirk, Th. Wittschirk, "Research on 9xx nm diode laser for direct and pumping applications", Proc. SPIE 9255, XX International Symposium on High-Power Laser Systems and Applications 2014, 92550Y (3 February 2015); doi: 10.1117/12.2072840; https://doi.org/10.1117/12.2072840


20.8W TM polarized GaAsP laser diodes of 808nm wavelength
Proceedings of SPIE (February 25 2013)
Highly-efficient high-power pumps for fiber lasers
Proceedings of SPIE (February 21 2017)
Newly developed high-power laser diode bars
Proceedings of SPIE (February 08 2012)
Highly reliable high power cw AlGaAs (808 nm) 1 cm...
Proceedings of SPIE (April 09 1995)

Back to Top