3 February 2015 Lifetime of high-power GaAs photoconductive semiconductor switch triggered by laser of different power density
Author Affiliations +
Proceedings Volume 9255, XX International Symposium on High-Power Laser Systems and Applications 2014; 92554G (2015) https://doi.org/10.1117/12.2065390
Event: XX International Symposium on High Power Laser Systems and Applications, 2014, Chengdu, China
Abstract
Conduction modes of GaAs photoconductive semiconductor switch (PCSS) and their conditions are expounded. Laser diode and high-power picosecond Nd:YAG lasers are used as triggers for nonlinear mode and quasi-linear mode respectively in high-power conduction experiment. GaAs PCSS`s failure mechanisms and factors influencing lifetime in both modes are analyzed. It is found that the power density of laser at trigger time determines in which mode GaAs PCSS operates. Low-power laser triggers a nonlinear mode conduction in which GaAs PCSS`s lifetime is only 103, while high-power laser triggers a quasi-linear mode conduction in which GaAs PCSS`s lifetime is up to 105. According to the findings, the compact high-power pulsed power system based on mass of GaAs PCSSs demands for miniature high-power laser generators.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi Liu, Wei Wang, Yi Shen, Jinshui Shi, Linwen Zhang, Liansheng Xia, "Lifetime of high-power GaAs photoconductive semiconductor switch triggered by laser of different power density", Proc. SPIE 9255, XX International Symposium on High-Power Laser Systems and Applications 2014, 92554G (3 February 2015); doi: 10.1117/12.2065390; https://doi.org/10.1117/12.2065390
PROCEEDINGS
5 PAGES


SHARE
Back to Top