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28 July 2014 Accurate mask model for advanced nodes
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Standard OPC models consist of a physical optical model and an empirical resist model. The resist model compensates the optical model imprecision on top of modeling resist development. The optical model imprecision may result from mask topography effects and real mask information including mask ebeam writing and mask process contributions. For advanced technology nodes, significant progress has been made to model mask topography to improve optical model accuracy. However, mask information is difficult to decorrelate from standard OPC model. Our goal is to establish an accurate mask model through a dedicated calibration exercise. In this paper, we present a flow to calibrate an accurate mask enabling its implementation. The study covers the different effects that should be embedded in the mask model as well as the experiment required to model them.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nacer Zine El Abidine, Frank Sundermann, Emek Yesilada, El Hadji Omar Ndiaye, Kushlendra Mishra, Sankaranarayanan Paninjath, Ingo Bork, Peter Buck, Olivier Toublan, and Isabelle Schanen "Accurate mask model for advanced nodes", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 925603 (28 July 2014);


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