28 July 2014 EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond
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Abstract
EBM-9000 equipped with new features such as new electron optics, high current density (800A/cm2) and high speed deflection control has been developed for the 11nm technology node(tn) (half pitch (hp) 16nm). Also in parallel of aggressive introduction of new technologies, EBM-9000 inherits the 50kV variable shaped electron beam / vector scan architecture, continuous stage motion and VSB-12 data format handling from the preceding EBM series to maintain high reliability accepted by many customers. This paper will report our technical challenges and results obtained through the development.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidekazu Takekoshi, Hidekazu Takekoshi, Takahito Nakayama, Takahito Nakayama, Kenichi Saito, Kenichi Saito, Hiroyoshi Ando, Hiroyoshi Ando, Hideo Inoue, Hideo Inoue, Noriaki Nakayamada, Noriaki Nakayamada, Takashi Kamikubo, Takashi Kamikubo, Rieko Nishimura, Rieko Nishimura, Yoshinori Kojima, Yoshinori Kojima, Jun Yashima, Jun Yashima, Akihito Anpo, Akihito Anpo, Seiichi Nakazawa, Seiichi Nakazawa, Tomohiro Iijima, Tomohiro Iijima, Kenji Ohtoshi, Kenji Ohtoshi, Hirohito Anze, Hirohito Anze, Victor Katsap, Victor Katsap, Steven Golladay, Steven Golladay, Rodney Kendall, Rodney Kendall, "EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 925607 (28 July 2014); doi: 10.1117/12.2065230; https://doi.org/10.1117/12.2065230
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