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28 July 2014 EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond
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EBM-9000 equipped with new features such as new electron optics, high current density (800A/cm2) and high speed deflection control has been developed for the 11nm technology node(tn) (half pitch (hp) 16nm). Also in parallel of aggressive introduction of new technologies, EBM-9000 inherits the 50kV variable shaped electron beam / vector scan architecture, continuous stage motion and VSB-12 data format handling from the preceding EBM series to maintain high reliability accepted by many customers. This paper will report our technical challenges and results obtained through the development.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hidekazu Takekoshi, Takahito Nakayama, Kenichi Saito, Hiroyoshi Ando, Hideo Inoue, Noriaki Nakayamada, Takashi Kamikubo, Rieko Nishimura, Yoshinori Kojima, Jun Yashima, Akihito Anpo, Seiichi Nakazawa, Tomohiro Iijima, Kenji Ohtoshi, Hirohito Anze, Victor Katsap, Steven Golladay, and Rodney Kendall "EBM-9000: EB mask writer for product mask fabrication of 16nm half-pitch generation and beyond", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 925607 (28 July 2014);


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