Paper
28 July 2014 In-die registration measurement using novel model-based approach for advanced technology masks
Shunsuke Sato, Frank Laske, Shinji Kunitani, Tatsuhiko Kamibayashi, Akira Fuse, Naoki Takahashi, Klaus-Dieter Roeth, Slawomir Czerkas, Mehdi Daneshpanah, Yoshinori Nagaoka
Author Affiliations +
Abstract
In recent years, 193nm immersion lithography has been extended instead of adopting EUV lithography. And multi-patterning technology is now widely applied, which requires tighter specification as the pattern size gets smaller on advanced semiconductor devices. Regarding the mask registration metrology, it is necessary to consider some difficult challenges like tight repeatability and complex In-Die pattern measurement. In this study, the registration measurement capability was investigated on new registration metrology tool IPRO5+, and new measurement method called Model-Based measurement was evaluated. And the performance and the prospect for advanced technology masks of the IPRO5+ were discussed based on the evaluation results.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shunsuke Sato, Frank Laske, Shinji Kunitani, Tatsuhiko Kamibayashi, Akira Fuse, Naoki Takahashi, Klaus-Dieter Roeth, Slawomir Czerkas, Mehdi Daneshpanah, and Yoshinori Nagaoka "In-die registration measurement using novel model-based approach for advanced technology masks", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560E (28 July 2014); https://doi.org/10.1117/12.2070399
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KEYWORDS
Photomasks

Image registration

Model-based design

Semiconducting wafers

Overlay metrology

Data modeling

Metrology

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