28 July 2014 Extreme ultraviolet mask roughness: requirements, characterization, and modeling
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Abstract
It is now well established that extremely ultraviolet (EUV) mask multilayer roughness can lead to wafer-plane line-edge roughness (LER) in lithography tools. It is also evident that this same effect leads to sensor plane variability in inspection tools. This is true for both patterned mask and mask blank inspection. Here we evaluate mask roughness specifications explicitly from the actinic inspection perspective. The mask roughness requirement resulting from this analysis are consistent with previously described requirements based on lithographic LER. In addition to model-based analysis, we also consider the characterization of multilayer mask roughness and evaluate the validity of using atomic force microscopy (AFM) based measurements by direct comparison to EUV scatterometry measurements as well as aerial image measurements on a series of high quality EUV masks. The results demonstrate a significant discrepancy between AFM results and true EUV roughness as measured by actinic scattering.
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Patrick Naulleau, Patrick Naulleau, Suchit Bhattaria, Suchit Bhattaria, Rick Chao, Rick Chao, Rene Claus, Rene Claus, Kenneth Goldberg, Kenneth Goldberg, Frank Goodwin, Frank Goodwin, Eric Gullikson, Eric Gullikson, Donggun Lee, Donggun Lee, Andy Neureuther, Andy Neureuther, Jong-Ju Park, Jong-Ju Park, } "Extreme ultraviolet mask roughness: requirements, characterization, and modeling ", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560J (28 July 2014); doi: 10.1117/12.2070303; https://doi.org/10.1117/12.2070303
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