28 July 2014 EUV patterned mask inspection performance of an advanced projection electron microscope (PEM) system for hp 16 nm and beyond
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Abstract
The framework and the current status of a newly developed PEM pattern inspection system are presented. A die-to-die defect detection sensitivity of the developing system is investigated. A programmed defect mask was used for demonstrating the performance of the system. Defect images were obtained as difference images by comparing the PEM images “with-defects” to the PEM images “without-defects”. The image-processing system was also developed for dieto- die inspection. A targeted inspection-throughput of 19-hour inspection per mask with 16 nm pixel size for image capture was attained. Captured images of extrusion and intrusion defects in hp 64 nm L/S pattern were used for detection. Then 16 nm sized intrusion defect, which was our target size for hp 16 nm defect detection requirement, was identified without false defects. To improve the performance of hp 16 nm patterned mask inspection, defect detection requirements for hp 11 nm EUVL patterned mask inspection was studied.
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Ryoichi Hirano, Ryoichi Hirano, Susumu Iida, Susumu Iida, Tsuyoshi Amano, Tsuyoshi Amano, Tsueno Terasawa, Tsueno Terasawa, Hidehiro Watanabe, Hidehiro Watanabe, Masahiro Hatakeyama, Masahiro Hatakeyama, Takeshi Murakami, Takeshi Murakami, Kenji Terao, Kenji Terao, } "EUV patterned mask inspection performance of an advanced projection electron microscope (PEM) system for hp 16 nm and beyond", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560M (28 July 2014); doi: 10.1117/12.2069723; https://doi.org/10.1117/12.2069723
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