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28 July 2014 Screening EUV mask absorbers for defect repair
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Five EUV film stacks were prepared and evaluated from the multiple viewpoints of mask repair process: etching property, CD control and wafer print. Etching property results revealed a thicker lower reflective (LR) layer stack showed good performance. Some types of defects were repaired and a CD comparison done with both CD-SEM and EUV microscope. It was found thinner total film stack (LR plus absorber) performs better than thicker ones for CD control. In addition, thicker LR performed better than thinner LR. Wafer print performance on the repaired site was evaluated through focus by imaging on an EUV microscope. Wafer printability performance showed that thinner total film stack performed better than a thicker one. Finally the best stack for EUV mask repair performance was determined to be a thinner total film stack and thicker a LR from all the various points of view.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takeshi Isogawa, Kazunori Seki, Mark Lawliss, Emily Gallagher, Shinji Akima, and Toshio Konishi "Screening EUV mask absorbers for defect repair", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560N (28 July 2014);

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