28 July 2014 Screening EUV mask absorbers for defect repair
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Abstract
Five EUV film stacks were prepared and evaluated from the multiple viewpoints of mask repair process: etching property, CD control and wafer print. Etching property results revealed a thicker lower reflective (LR) layer stack showed good performance. Some types of defects were repaired and a CD comparison done with both CD-SEM and EUV microscope. It was found thinner total film stack (LR plus absorber) performs better than thicker ones for CD control. In addition, thicker LR performed better than thinner LR. Wafer print performance on the repaired site was evaluated through focus by imaging on an EUV microscope. Wafer printability performance showed that thinner total film stack performed better than a thicker one. Finally the best stack for EUV mask repair performance was determined to be a thinner total film stack and thicker a LR from all the various points of view.
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Takeshi Isogawa, Takeshi Isogawa, Kazunori Seki, Kazunori Seki, Mark Lawliss, Mark Lawliss, Emily Gallagher, Emily Gallagher, Shinji Akima, Shinji Akima, Toshio Konishi, Toshio Konishi, } "Screening EUV mask absorbers for defect repair", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560N (28 July 2014); doi: 10.1117/12.2070251; https://doi.org/10.1117/12.2070251
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