28 July 2014 Etched multilayer mask is better than conventional absorber mask
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The main problem in extreme ultra-violet (EUV) lithography for mass production is low source power. In order to overcome this problem, we suggest to use an etched multilayer mask introduced several years ago. The etched multilayer mask structure does not need an absorber stack and it was found that we could get higher aerial image slope and peak intensity than those of the conventional absorber mask structure. Also, the etched multilayer mask can reduce the pattern shift and horizontal-vertical (H-V) bias.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guk-Jin Kim, Guk-Jin Kim, Hye-Keun Oh, Hye-Keun Oh, In-Seon Kim, In-Seon Kim, Michael Yeung, Michael Yeung, Eytan Barouch, Eytan Barouch, } "Etched multilayer mask is better than conventional absorber mask", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560R (28 July 2014); doi: 10.1117/12.2069885; https://doi.org/10.1117/12.2069885


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