23 June 2014 Photoluminescence of chemically treated InAs (111)A
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Proceedings Volume 9257, Sensors, MEMS and Electro-Optical Systems; 925703 (2014) https://doi.org/10.1117/12.2066270
Event: Third Conference on Sensors, MEMS and Electro-Optic Systems, 2014, Skukuza, Kruger National Park, South Africa
Variable laser power and temperature dependent photoluminescence (PL) measurements were used to identify some of the optical transitions and impurity-related emissions for chemically treated (Br-methanol, (NH4)2S + S or [(NH4)2S/ (NH4)2SO4] + S solutions) or oxidised (annealed in oxygen) bulk n-InAs (111)A. A combination of PL and X-ray photoelectron spectroscopy (XPS) measurements before and after various treatments was used to identify the chemical nature of the impurities giving rise to bound exciton recombination in InAs (111). Band–to-band transitions have been observed at 0.4185 eV. In addition, two shallow neutral donor bound excitons ascribed to atomic oxygen (at 0.412 eV) and to sulphur (at 0.414 eV), have been detected after treatment.
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N. Eassa, N. Eassa, E. Coetsee, E. Coetsee, H. C. Swart, H. C. Swart, A. Venter, A. Venter, J. R. Botha, J. R. Botha, "Photoluminescence of chemically treated InAs (111)A", Proc. SPIE 9257, Sensors, MEMS and Electro-Optical Systems, 925703 (23 June 2014); doi: 10.1117/12.2066270; https://doi.org/10.1117/12.2066270

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