23 June 2014 Low temperature solder process to join a copper tube to a silicon wafer
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Proceedings Volume 9257, Sensors, MEMS and Electro-Optical Systems; 92570A (2014) https://doi.org/10.1117/12.2066381
Event: Third Conference on Sensors, MEMS and Electro-Optic Systems, 2014, Skukuza, Kruger National Park, South Africa
Abstract
With the application for wafer level packages, which could be Complementary Metal–Oxide–Semiconductor (CMOS) based, and which requires a reduced atmosphere, a copper tube connection to a vacuum pump and the package is proposed. The method evaluated uses laser assisted brazing of a solder, to join the copper tube to a silicon wafer. The method was applied to a silicon wafer coated with a metallic interface to bond to the solder. The hermeticity of the joint was tested with a helium leak rate tester and the bonding energy thermal extent was verified with a thin layer of indium that melted wherever the substrate temperature rose above its melting temperature.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christo Versteeg, Marcio Scarpim de Souza, "Low temperature solder process to join a copper tube to a silicon wafer", Proc. SPIE 9257, Sensors, MEMS and Electro-Optical Systems, 92570A (23 June 2014); doi: 10.1117/12.2066381; https://doi.org/10.1117/12.2066381
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