23 June 2014 Low temperature solder process to join a copper tube to a silicon wafer
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Proceedings Volume 9257, Sensors, MEMS and Electro-Optical Systems; 92570A (2014) https://doi.org/10.1117/12.2066381
Event: Third Conference on Sensors, MEMS and Electro-Optic Systems, 2014, Skukuza, Kruger National Park, South Africa
Abstract
With the application for wafer level packages, which could be Complementary Metal–Oxide–Semiconductor (CMOS) based, and which requires a reduced atmosphere, a copper tube connection to a vacuum pump and the package is proposed. The method evaluated uses laser assisted brazing of a solder, to join the copper tube to a silicon wafer. The method was applied to a silicon wafer coated with a metallic interface to bond to the solder. The hermeticity of the joint was tested with a helium leak rate tester and the bonding energy thermal extent was verified with a thin layer of indium that melted wherever the substrate temperature rose above its melting temperature.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christo Versteeg, Christo Versteeg, Marcio Scarpim de Souza, Marcio Scarpim de Souza, "Low temperature solder process to join a copper tube to a silicon wafer", Proc. SPIE 9257, Sensors, MEMS and Electro-Optical Systems, 92570A (23 June 2014); doi: 10.1117/12.2066381; https://doi.org/10.1117/12.2066381
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