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20 February 2015 Photoluminescence of some chalcogenide glasses doped with rare-earth ions
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Proceedings Volume 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII; 925805 (2015) https://doi.org/10.1117/12.2068290
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2014, 2014, Constanta, Romania
Abstract
The absorption and emission spectra of Ga-La-S:O doped with Pr3+, and Ga-Ge-As-S chalcogenide glasses doped with Pr3+, Dy3+, Nd3+, Sm3+ and Ho3+ were experimentally investigated at room temperature and at T=4 K. Photoluminescence spectra were measured at low temperature (T=4 K) at excitation by He-Ne (λ=632.8 nm line) and Ar ion (INNOVA 306, λ=514.5 nm line) lasers working in CW regime, in order to observe simultaneously the narrow 4f-4f emission from rare-earth ions and the broad band luminescence of the host glass. In the transmission spectra of rare-earth doped glasses differs from that of the base glass. The major feature in low-temperature of photoluminescence spectra (PL) is the presence of the broad band luminescence of the host glass and relatively sharp 4f-4f radiative transitions due to the presence of rare-earth (RE3+) ions, that gives the direct evidence of the energy transfer between the host glass and respective RE3+ dopants.
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Mihail Iovu, Elana Lupan, Jurii Zavadil, Peter Kostka, Zoya Ivanova, Angela Seddon, and David Furniss "Photoluminescence of some chalcogenide glasses doped with rare-earth ions", Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 925805 (20 February 2015); https://doi.org/10.1117/12.2068290
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