20 February 2015 High efficiency DC-DC converter using GaN transistors
Author Affiliations +
Proceedings Volume 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII; 92580G (2015) https://doi.org/10.1117/12.2070029
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2014, 2014, Constanta, Romania
Abstract
The paper presents a new high-efficiency power switching supply using the Gallium Nitride (GaN) technology. There are compared two solutions, the first using standard MOS transistors and the second using the new GaN transistor. The actual green technologies for obtaining the maximum energy and minimum losses have pushed the semiconductor industry into a continuous research regarding high power and high frequency devices, having uses in both digital communications and switching power supplies.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cosmin-Andrei Tӑmaş, Cristian Grecu, Mihaela Pantazică, Ion Marghescu, "High efficiency DC-DC converter using GaN transistors", Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 92580G (20 February 2015); doi: 10.1117/12.2070029; https://doi.org/10.1117/12.2070029
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

Topologies for low-voltage regulator modules
Proceedings of SPIE (September 02 2003)
Forced Commutation Topologies In Thyristor Chopper Circuits
Proceedings of SPIE (October 19 1987)
Total ionizing dose effects on the IGBT performance for a...
Proceedings of SPIE (January 09 2008)
Switched-mode laser power supply
Proceedings of SPIE (June 29 2001)
High-regulation, capacitor-charging power supplies
Proceedings of SPIE (March 03 1995)

Back to Top