20 February 2015 High efficiency DC-DC converter using GaN transistors
Author Affiliations +
Proceedings Volume 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII; 92580G (2015) https://doi.org/10.1117/12.2070029
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2014, 2014, Constanta, Romania
Abstract
The paper presents a new high-efficiency power switching supply using the Gallium Nitride (GaN) technology. There are compared two solutions, the first using standard MOS transistors and the second using the new GaN transistor. The actual green technologies for obtaining the maximum energy and minimum losses have pushed the semiconductor industry into a continuous research regarding high power and high frequency devices, having uses in both digital communications and switching power supplies.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cosmin-Andrei Tӑmaş, Cosmin-Andrei Tӑmaş, Cristian Grecu, Cristian Grecu, Mihaela Pantazică, Mihaela Pantazică, Ion Marghescu, Ion Marghescu, } "High efficiency DC-DC converter using GaN transistors", Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 92580G (20 February 2015); doi: 10.1117/12.2070029; https://doi.org/10.1117/12.2070029
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

Bias pulse modulator for a high power K band (26...
Proceedings of SPIE (November 29 2017)
Optical bistability in electrically coupled SOA-BJT devices
Proceedings of SPIE (September 13 2010)
Topologies for low-voltage regulator modules
Proceedings of SPIE (September 01 2003)
Forced Commutation Topologies In Thyristor Chopper Circuits
Proceedings of SPIE (October 18 1987)
Total ionizing dose effects on the IGBT performance for a...
Proceedings of SPIE (January 08 2008)
Switched-mode laser power supply
Proceedings of SPIE (June 28 2001)

Back to Top