20 February 2015 Electron-beam recording of patterns in chalcogenide films
Author Affiliations +
Proceedings Volume 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII; 92580S (2015) https://doi.org/10.1117/12.2069974
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2014, 2014, Constanta, Romania
Abstract
Thin films of chalcogenide glasses (ChG) of different composition have been used for e-beam recording of diffraction grating structures. The dependencies of diffraction efficiency of gratings on radiation dose were studied. The influence of ChG film composition on diffraction properties of gratings was shown. It was established that the refractive index gratings formed in As2S3 films exhibit high stability during their dark storage. The diffraction efficiency enhancement caused by uniform light irradiation was observed for gratings recorded in As4S3Se3 thin films, doped with Sn. With use of computer-controlled positioning of electron beam both the raster scan and vector patterns were recorded in As2S3 films. In the former case the images from BMP-files were patterned. In the latter case the mosaic of diffraction gratings, producing the multi-beam light diffraction was recorded.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. A. Sergeev, M. S. Iovu, O. V. Iaseniuc, "Electron-beam recording of patterns in chalcogenide films", Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 92580S (20 February 2015); doi: 10.1117/12.2069974; https://doi.org/10.1117/12.2069974
PROCEEDINGS
6 PAGES


SHARE
Back to Top