20 February 2015 Preparation and characterization of Ga2O3 and GaN nanoparticles
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Proceedings Volume 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII; 92581U (2015) https://doi.org/10.1117/12.2069969
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2014, 2014, Constanta, Romania
Abstract
In this communication, we present results on preparation of GaN nanoparticles by conversion of Ga2O3 nanocrystals in a flow of NH3 and H2. The monoclinic Ga2O3 nanoparticles have been prepared by hydrothermal method with gallium nitrate and sodium hydroxide as precursors. Ga2O3 nanowires are produced with increasing the duration of the hydrothermal process up to 24 hours. The production of β-phase Ga2O3 has been confirmed by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. According to XRD, Raman and FTIR spectra, wurtzite type GaN nanocrystals with an average size of 28.6 nm are obtained by nitridation of Ga2O3 nanoparticles. Doping of Ga2O3 nanomaterial with Eu3+ ions in the hydrothermal process is demonstrated, and the emission spectra of this Eu-doped nanomaterial are compared with those of Eu-doped nanoparticles prepared previously by solid state reactions.
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E. Rusu, E. Rusu, V. Ursaki, V. Ursaki, S. Raevschi, S. Raevschi, P. Vlazan, P. Vlazan, } "Preparation and characterization of Ga2O3 and GaN nanoparticles", Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 92581U (20 February 2015); doi: 10.1117/12.2069969; https://doi.org/10.1117/12.2069969
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