Numerical simulations of surface plasmon resonances in metal-chalcogenide waveguides

Mihai Stafe; Georgiana C. Vasile; Aurelian A. Popescu; Dan Savastru; Laurentiu Baschir; Mona Mihailescu; Constantin Negutu; Niculae N. Puscas

doi:10.1117/12.2070182

20 February 2015 Numerical simulations of surface plasmon resonances in metal-chalcogenide waveguides

Mihai Stafe, Georgiana C. Vasile, Aurelian A. Popescu, Dan Savastru, Laurentiu Baschir, Mona Mihailescu, Constantin Negutu, Niculae N. Puscas

Author Affiliations +

Proceedings Volume 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII; 92582H (2015) https://doi.org/10.1117/12.2070182
Event: Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies 2014, 2014, Constanta, Romania

Abstract

In this paper we present several numerical simulations of the surface plasmon resonance for Kretschmann type configuration in a metal-chalcogenide waveguide. We assume that the chalcogenide (GaLaS) waveguide layer have finite thickness, whereas the gold film layer and the air cover layer are semi-infinite layers (from an optical point of view). We determined the thickness of the chalcogenide film for which plasmonic resonant coupling of the incident radiation to the waveguide occurs. We calculated the propagation constant for the TE- and TM- modes (both for visible and IR domain), the attenuation coefficient and the electromagnetic field distribution within the waveguide. The obtained results provide the conditions for design an optical memory device 2D based on light-light interaction in plasmonic configuration.

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Mihai Stafe, Mihai Stafe, Georgiana C. Vasile, Georgiana C. Vasile, Aurelian A. Popescu, Aurelian A. Popescu, Dan Savastru, Dan Savastru, Laurentiu Baschir, Laurentiu Baschir, Mona Mihailescu, Mona Mihailescu, Constantin Negutu, Constantin Negutu, Niculae N. Puscas, Niculae N. Puscas, "Numerical simulations of surface plasmon resonances in metal-chalcogenide waveguides ", Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 92582H (20 February 2015); doi: 10.1117/12.2070182; https://doi.org/10.1117/12.2070182

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