3 December 2014 Fabrication of InGaAs/InP DBR laser with butt-coupled passive waveguide utilizing selective wet etching
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Abstract
We investigated the etching process especially for the integrated InGaAs/InP multiquantum-well laser. Two different ways of etching process were demonstrated, which are RIE followed by selective wet etching and selective wet etching only. The latter one showed ideal interface between active region and passive waveguide after regrowth. This etching process is simpler and more effective than the first one. Using this process, we also fabricated a 1.79-μm DBR laser with 350-μm active region and 400-μm passive waveguide. The output power and threshold current and were demonstrated as a function of temperature. The wavelength tuning characters were investigated with current and temperature changes. It is demonstrated that this etching process can be successfully used to fabricate integrated photonic devices with InGaAs/InP materials and the DBR laser can be a candidate for gas sensing system due to the single mode and large tuning range.
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Junping Mi, Hongyan Yu, Lijun Yuan, Song Liang, Qiang Kan, Jiaoqing Pan, "Fabrication of InGaAs/InP DBR laser with butt-coupled passive waveguide utilizing selective wet etching", Proc. SPIE 9267, Semiconductor Lasers and Applications VI, 92670Z (3 December 2014); doi: 10.1117/12.2071526; https://doi.org/10.1117/12.2071526
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