MBE growth and fabrication of 2.Xum InGa(As)Sb/AlGaAsSb laser

Yu Zhang; Yuzhi Song; Junliang Xing; Yongping Liao; Chuanchuan Li; Yingqiang Xu; Yun Xu; Guofeng Song; Zhichuan Niu

doi:10.1117/12.2071640

21 November 2014 MBE growth and fabrication of 2.Xμm InGa(As)Sb/AlGaAsSb laser

Yu Zhang, Yuzhi Song, Junliang Xing, Yongping Liao, Chuanchuan Li, Yingqiang Xu, Yun Xu, Guofeng Song, Zhichuan Niu

Proceedings Volume 9267, Semiconductor Lasers and Applications VI; 926710 (2014) https://doi.org/10.1117/12.2071640
Event: SPIE/COS Photonics Asia, 2014, Beijing, China

Abstract

2.X μm InGa(As)Sb/AlGaAsSb compressively strained quantum wells laser has been grown and fabricated. Antimonide laser with 1.5mm*90μm without AR/HR emitted 550mW of continuous wave output power at 2μm.And 2.4μm laser without AR/HR output 195mW at room temperature.

Citation Download Citation

Yu Zhang, Yuzhi Song, Junliang Xing, Yongping Liao, Chuanchuan Li, Yingqiang Xu, Yun Xu, Guofeng Song, and Zhichuan Niu "MBE growth and fabrication of 2.Xμm InGa(As)Sb/AlGaAsSb laser", Proc. SPIE 9267, Semiconductor Lasers and Applications VI, 926710 (21 November 2014); https://doi.org/10.1117/12.2071640

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