21 November 2014 MBE growth and fabrication of 2.Xμm InGa(As)Sb/AlGaAsSb laser
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Abstract
2.X μm InGa(As)Sb/AlGaAsSb compressively strained quantum wells laser has been grown and fabricated. Antimonide laser with 1.5mm*90μm without AR/HR emitted 550mW of continuous wave output power at 2μm.And 2.4μm laser without AR/HR output 195mW at room temperature.
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Yu Zhang, Yu Zhang, Yuzhi Song, Yuzhi Song, Junliang Xing, Junliang Xing, Yongping Liao, Yongping Liao, Chuanchuan Li, Chuanchuan Li, Yingqiang Xu, Yingqiang Xu, Yun Xu, Yun Xu, Guofeng Song, Guofeng Song, Zhichuan Niu, Zhichuan Niu, } "MBE growth and fabrication of 2.Xμm InGa(As)Sb/AlGaAsSb laser", Proc. SPIE 9267, Semiconductor Lasers and Applications VI, 926710 (21 November 2014); doi: 10.1117/12.2071640; https://doi.org/10.1117/12.2071640
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