24 October 2014 Flexible amorphous oxide thin-film transistors on polyimide substrate for AMOLED
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Abstract
We report a flexible amorphous Lanthanide doped In-Zn-O (IZO) thin-film transistor (TFT) backplane on polyimide (PI) substrate. In order to de-bond the PI film from the glass carrier easily after the flexible AMOLED process, a special inorganic film is deposited on the glass before the PI film is coated. The TFT exhibited a field-effect mobility of 6.97 cm2V-1 s-1, a subthreshold swing of 0.248 V dec-1, and an Ion/Ioff ratio of 5.19×107, which is sufficient to drive the OLEDs.
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Zhiping Xu, Zhiping Xu, Min Li, Min Li, Miao Xu, Miao Xu, Jianhua Zou, Jianhua Zou, Zhuo Gao, Zhuo Gao, Jiawei Pang, Jiawei Pang, Ying Guo, Ying Guo, Lei Zhou, Lei Zhou, Chunfu Wang, Chunfu Wang, Dong Fu, Dong Fu, Junbiao Peng, Junbiao Peng, Lei Wang, Lei Wang, Yong Cao, Yong Cao, } "Flexible amorphous oxide thin-film transistors on polyimide substrate for AMOLED", Proc. SPIE 9270, Optoelectronic Devices and Integration V, 92700A (24 October 2014); doi: 10.1117/12.2071794; https://doi.org/10.1117/12.2071794
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