24 October 2014 Flexible amorphous oxide thin-film transistors on polyimide substrate for AMOLED
Author Affiliations +
Abstract
We report a flexible amorphous Lanthanide doped In-Zn-O (IZO) thin-film transistor (TFT) backplane on polyimide (PI) substrate. In order to de-bond the PI film from the glass carrier easily after the flexible AMOLED process, a special inorganic film is deposited on the glass before the PI film is coated. The TFT exhibited a field-effect mobility of 6.97 cm2V-1 s-1, a subthreshold swing of 0.248 V dec-1, and an Ion/Ioff ratio of 5.19×107, which is sufficient to drive the OLEDs.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhiping Xu, Min Li, Miao Xu, Jianhua Zou, Zhuo Gao, Jiawei Pang, Ying Guo, Lei Zhou, Chunfu Wang, Dong Fu, Junbiao Peng, Lei Wang, Yong Cao, "Flexible amorphous oxide thin-film transistors on polyimide substrate for AMOLED", Proc. SPIE 9270, Optoelectronic Devices and Integration V, 92700A (24 October 2014); doi: 10.1117/12.2071794; https://doi.org/10.1117/12.2071794
PROCEEDINGS
7 PAGES


SHARE
Back to Top