24 October 2014 Photoemission behaviors of transmission-mode InGaAs photocathode
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Abstract
Based on the studies of the GaAs photocathode, the surface model of the InGaAs photocathode is investigated and the energy distributions of electrons reaching the band bending region, reaching the surface and emitting into vacuum are calculated. We use the quantum efficiency formula to fit the experimental curves, and obtain the performance parameters of the photocathode and the surface barrier parameters. The results show that the electron escape probability is seriously influenced by energy distribution and plays an important role in the research of high quantum efficiency as well. After the theoretical calculation, the energy range of electrons crossing the BBR broaden, the peak of the electron energy distribution shifts forward to low energy, the number of low energy electrons increases obviously; The surface barriers of the InGaAs photocathode is similar to that of the GaAs photocathode. The height of barrier II not only decreases the number of electrons, but also makes the width of electron energy distribution narrow. The prepared transmission-mode InGaAs photocathode contains 20% InAs and 80% GaAs. This combination of InGaAs photocathodes is widely used in the weak light detection field, such as night vision technology, forest fire prevention and harsh climate monitoring.
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Muchun Jin, Muchun Jin, Benkang Chang, Benkang Chang, Xinlong Chen, Xinlong Chen, Yijun Zhang, Yijun Zhang, Hongchang Cheng, Hongchang Cheng, "Photoemission behaviors of transmission-mode InGaAs photocathode", Proc. SPIE 9270, Optoelectronic Devices and Integration V, 92701C (24 October 2014); doi: 10.1117/12.2065301; https://doi.org/10.1117/12.2065301
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