13 November 2014 A new electro-absorption modulator structure based on Ge/SiGe coupled quantum wells for on-chip optical interconnects
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Abstract
In this paper, a novel electro-absorption modulation mechanism based on coupled-quantum-wells (CQWs) is proposed and demonstrated. Compared to a quantum-confined-stark-effect (QCSE) modulator with multiple fully decoupled single-QWs, the newly designed CQW modulator has two sub-quantum-wells partially coupled with a small barrier in between. Modulation is based on the change of electron and hole wave-function overlap in the CQWs, which requires a small bias electric field of <10 kV/cm) compared to the operation of a typical QCSE modulator which requires >50 kV/cm bias electrical field. Theoretically, the power consumption of this new CQW modulator can be lower than 20 fJ/bit and the speed can be higher than 10 Gbps, which outperforms the best Ge/SiGe QCSE modulator that has been previously demonstrated. A proof-of-concept Ge/SiGe CQW modulator based on this novel modulation mechanism was designed and fabricated. Instead of a traditional PIN diode structure, the new CQW modulator uses a PIP structure.
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Yusi Chen, Yusi Chen, Xiaochi Chen, Xiaochi Chen, Yijie Huo, Yijie Huo, Ching-Ying Lu, Ching-Ying Lu, Edward T. Fei, Edward T. Fei, Kai Zang, Kai Zang, Colleen Shang, Colleen Shang, Yangsen Kang, Yangsen Kang, Jieyang Jia, Jieyang Jia, Theodore I. Kamins, Theodore I. Kamins, James S. Harris, James S. Harris, } "A new electro-absorption modulator structure based on Ge/SiGe coupled quantum wells for on-chip optical interconnects", Proc. SPIE 9277, Nanophotonics and Micro/Nano Optics II, 92770Y (13 November 2014); doi: 10.1117/12.2071673; https://doi.org/10.1117/12.2071673
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