18 September 2014 Detection and analysis of 1/f noise correlation in semiconductor laser diodes
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Proceedings Volume 9282, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment; 92820A (2014) https://doi.org/10.1117/12.2066778
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China
Abstract
In this paper, firstly we established the theoretical model of the relationship between correlation and wavelet vanishing moment of 1/f noise. Then we designed and built the 1/f noise measurement system for semiconductor laser diodes (LDs). Based on this, we introduced the measurement method of low-frequency electrical noise in semiconductor LDs and the extraction process of parameters associated. The wavelet transform decorrelation calculation is applied to the time-domain of the low-frequency noise signals, and the calculation and analysis of the relation between wavelet coefficients variances and scales are completed. The experimental results show that the noise wavelet coefficient correlation E and the vanishing moment N of wavelet function satisfy the decorrelation theoretical model at some scales, which implies that the low-frequency noise signals measured from the LDs belong to 1/f noise. Besides, the wavelet coefficient variance calculation results indicate that the noise measured in the experiments is 1/f noise from another aspect. Finally we theoretically proposed a new idea of semiconductor laser 1/f noise judging based on the methods above.
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Hui-juan Fan, Feng-li Gao, Jun-sheng Cao, Shu-xu Guo, "Detection and analysis of 1/f noise correlation in semiconductor laser diodes", Proc. SPIE 9282, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 92820A (18 September 2014); doi: 10.1117/12.2066778; https://doi.org/10.1117/12.2066778
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