2 September 2014 Performance of extended wavelength InGaAs/InAsP SWIR detector
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Proceedings Volume 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging; 928406 (2014) https://doi.org/10.1117/12.2069755
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China
Abstract
The single-pixel extended wavelength mesa InGaAs/InAsP SWIR detector was reported. The properties of the detector were characterized and analyzed at 160K~300K. At the operating temperature of 200K , the dark current density is 1.37×104 nA/cm2(@-10mV), the cut-off wavelength is 2.43μm, the peak detectivity and the peak responsivity are 3.44×1011cmHz1/2W-1 and 1.41A/W, respectively. Through analysis of the dark current source, the analysis of reverse dark current indicates that the tunneling current plays an important role at high voltage or relatively low temperature, and at near room temperature and low bias voltage, the generation-recombination current is the main current source instead of ohmic current based on thermal activation energy approximate to Eg/2 and the bias-voltage characteristic of the first order derivative of dark current, while the zero-voltage current mainly consists of the interface current and the thermal background current.
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Gaoqi Cao, Tao Li, Hengjing Tang, Xiumei Shao, Xue Li, Haimei Gong, "Performance of extended wavelength InGaAs/InAsP SWIR detector", Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 928406 (2 September 2014); doi: 10.1117/12.2069755; https://doi.org/10.1117/12.2069755
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