2 September 2014 Characteristic analysis on the thermal noise of infrared CCD
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Proceedings Volume 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging; 928407 (2014) https://doi.org/10.1117/12.2070039
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China
Abstract
1.064 μm, 1.319 μm and 10.6 μm laser were used to irradiate silicon-based HgCdTe CCD image system. The temperature distribution of detector induced by infrared laser irradiating in the experiment above was simulated. The influence of temperature on photoelectric parameters of HgCdTe CCD was calculated. A CCD physical model of crosstalk saturation was built and the response characteristic of CCD under the influence of thermal noise was analyzed. Result indicated that the rise of temperature induced by laser irradiating little influenced imaging effect of CCD.
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Rong-zhu Zhang, Rong-zhu Zhang, Xing Yu, Xing Yu, Guo-dong Liu, Guo-dong Liu, } "Characteristic analysis on the thermal noise of infrared CCD", Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 928407 (2 September 2014); doi: 10.1117/12.2070039; https://doi.org/10.1117/12.2070039
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