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2 September 2014 The study of the effect on the organic emitting diodes with (t-bt)2Ir(acac) as deep hole-trap
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Proceedings Volume 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging; 92840M (2014) https://doi.org/10.1117/12.2074781
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China
Abstract
Phosphorescent materials are crucial to improve the luminescence and efficiency of organic light emitting diodes, because its internal quantum efficiency can almost up to 100%. So the studying of optical and electrical properties of phosphorescent materials is propitious to the further development of phosphorescent OLED. Phosphorescent materials were generally doped into different host materials as emitting components, not only played an important role in emitting light but also had a great influence on carrier transport properties. (t-bt)2Ir(acac) was a common yellow phosphorescent material. The optical and electrical properties of the blue DPVBi-based devices, adding (t-bt)2Ir(acac) in different position, have studied. The results showed (t-bt)2Ir(acac) has remarkable hole-trapping ability. Especially the ultrathin structure device, compared to the device without (t-bt)2Ir(acac), had increased the luminance by about 60%, and the efficiency by about 97%.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ming Deng, Jian Zhong, Keke Gu, Jiule Chen, and Yucheng Chen "The study of the effect on the organic emitting diodes with (t-bt)2Ir(acac) as deep hole-trap", Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 92840M (2 September 2014); https://doi.org/10.1117/12.2074781
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