2 September 2014 Infrared absorption mechanisms of black silicon
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Proceedings Volume 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging; 92840S (2014) https://doi.org/10.1117/12.2069604
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China
Abstract
Black silicon has a wide spectrum of non-spectral characteristics high absorption from visible to long wave infrared band .Based on semi-empirical impurity band model, free carrier absorption, radiation transitions between the valence band and the impurity band, radiation transitions between the impurity band and the conduction band were calculated, and absorption coefficients for each process were got. The results showed that the transitions from valence band to the impurity band induced absorption in the near-infrared waveband, but it has a rapid decay with wavelength. In the shortwave mid-wave and long-wave IR bands, transitions from the impurity band to the conduction band caused a huge absorption, and the absorption coefficient was slowly decreased with increasing wavelength. The free carrier absorption dominates in long-wave band. The calculation results agreed well with the test results of plant black silicon in magnitude and trends.
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Zhengxi Cheng, Yongping Chen, Bin Ma, "Infrared absorption mechanisms of black silicon ", Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 92840S (2 September 2014); doi: 10.1117/12.2069604; https://doi.org/10.1117/12.2069604
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