2 September 2014 Cooperative chemisorption of K and O elements on cleaved GaAs(110) surface
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Proceedings Volume 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging; 92841G (2014) https://doi.org/10.1117/12.2069815
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China
Abstract
Using the projected augmented wave potential by the density functional theory based upon gradual gradient approach method and the slab model, from the calculated surface, we identify the relaxed atoms sites of GaAs(110) surface, the electronic structure of elements K and O adsorpted on binding sites of ideal GaAs(110) surface have also been calculated, especially the total energy of the adsorption system. The comparison results of calculated total energy showed: for K and O elements at highest coverage of Θ=1ML on GaAs(110) surface, they were not formed to local domain of competitive chemical adsorption, while they were formed to a compound uniformity phase of cooperative chemical adsorption. Our calculated results providing theoretical basis and reference for the application of alkali oxidation adsorpted on GaAs surface to form a negative electron affinity photocathode.
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Bin Ren, Zhuang Miao, Zhi-Peng Hou, Hong-Chang Cheng, Feng Shi, Gang-Cheng Jiao, Xiao-Feng Bai, Sen Niu, Long Wang, Ling-Yun Fu, "Cooperative chemisorption of K and O elements on cleaved GaAs(110) surface ", Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 92841G (2 September 2014); doi: 10.1117/12.2069815; https://doi.org/10.1117/12.2069815
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