2 September 2014 Research on theory of the silicon material electro-optic modulator
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Proceedings Volume 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging; 92841H (2014) https://doi.org/10.1117/12.2069809
Event: 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2014), 2014, Harbin, China
Abstract
The applied field can cause the inversion symmetry of the silicon single crystal is destroyed and disappears. So the silicon produce a second-order nonlinear optical effect. We exhibition electro-optic effect with index ellipsoid method for analyzing along different direction applied electric field. The result can be used to designing silicon electro-optic modulation.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-hong Zhang, Yu-hong Zhang, Wan-min Li, Wan-min Li, Hang Liu, Hang Liu, "Research on theory of the silicon material electro-optic modulator", Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 92841H (2 September 2014); doi: 10.1117/12.2069809; https://doi.org/10.1117/12.2069809
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