25 November 2014 Field emission from carbon nanotube films deposited on etched Si
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Proceedings Volume 9290, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2014; 92901D (2014) https://doi.org/10.1117/12.2075181
Event: Symposium on Photonics Applications in Astronomy, Communications, Industry and High-Energy Physics Experiments, 2014, Warsaw, Poland
Abstract
Field emission from carbon nanotubes films prepared on etched silicon is presented. The etched Si surface has hillockslike form. CNTs films were obtained in two-step method consisting of physical vapor deposition and chemical vapor deposition. For some samples CNTs growth mainly on the top of the hillocks. Field emission from these structures were observed and emission current (at 25 V/μm ) was 0.01-0.03mA. The current – voltage characteristics and an interpretation of observed emission were performed on base of Fowler- Nordheim theory. The short-term stability measurement of emission were also performed.
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I. Stępińska, J. Radomska, H. Wronka, E. Rzepka, M. Kozłowski, E. Czerwosz, "Field emission from carbon nanotube films deposited on etched Si", Proc. SPIE 9290, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2014, 92901D (25 November 2014); doi: 10.1117/12.2075181; https://doi.org/10.1117/12.2075181
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