The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p+-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n+ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion.
The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage VR = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.