17 December 2014 193 nm scatterfield microscope illumination optics
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Proceedings Volume 9293, International Optical Design Conference 2014; 92931D (2014) https://doi.org/10.1117/12.2074211
Event: International Optical Design Conference, 2014, Kohala Coast, Hawaii, United States
A scatterfield microscope for deep sub-wavelength semiconductor metrology using 193 nm light has been designed. In addition to accommodating the fixed numerical aperture and size of its commercial catadioptric objective lens, the illumination optics are formed to implement essential parameters necessary for angular illumination control at the sample plane. This angle-resolved scatterfield microscope requires access to a relatively large (> 10 mm) conjugate back focal plane as well as increased fluence from the ArF excimer laser source. The parametric optimization process yielded a telecentric conjugate back focal plane with appropriate numerical aperture and diameter by adjustment of the parameters of two interrelated lens groups.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Y. Sohn, Martin Y. Sohn, Richard M. Silver, Richard M. Silver, "193 nm scatterfield microscope illumination optics", Proc. SPIE 9293, International Optical Design Conference 2014, 92931D (17 December 2014); doi: 10.1117/12.2074211; https://doi.org/10.1117/12.2074211


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