9 December 2014 Optimization of 1300 nm quantum well laser on GaAs substrates
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The high-performance InGaAsSb/GaAsSb/GaAs lasers emitting 1300 nm is simulated. Compared to the type-II quantum well GaAsSb/GaAs, In0.48Ga0.52As0.98Sb0.02/GaAs0.98Sb0.22 has large bandoffset which will offer a better electron confinement. And GaAs0.98Sb0.22 can reduce the effective strain of the highly lattice mismatched InGaAsSb quantum well. The transparent carrier densities of active unit is as low as 0.72×1018 cm-3. The threshold current and slope efficiency of the InGaAsSb/GaAsSb/GaAs three quantum wells laser is equal to 83 mA and 0.62W/A. When the current is over 93 mA, external efficiency will reach 0.72. In order to further enhance the performance of InGaAsSb/GaAsSb quantum well (QW) laser, the asymmetric (0.5 μm/1.5 μm) waveguide structure is also studied.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ning An, Zhipeng Wei, Xuan Fang, Guojun Liu, Xiaohui Ma, "Optimization of 1300 nm quantum well laser on GaAs substrates", Proc. SPIE 9294, International Symposium on Optoelectronic Technology and Application 2014: Development and Application of High Power Lasers, 92940W (9 December 2014); doi: 10.1117/12.2071603; https://doi.org/10.1117/12.2071603


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