9 December 2014 Optimization of 1300 nm quantum well laser on GaAs substrates
Author Affiliations +
Abstract
The high-performance InGaAsSb/GaAsSb/GaAs lasers emitting 1300 nm is simulated. Compared to the type-II quantum well GaAsSb/GaAs, In0.48Ga0.52As0.98Sb0.02/GaAs0.98Sb0.22 has large bandoffset which will offer a better electron confinement. And GaAs0.98Sb0.22 can reduce the effective strain of the highly lattice mismatched InGaAsSb quantum well. The transparent carrier densities of active unit is as low as 0.72×1018 cm-3. The threshold current and slope efficiency of the InGaAsSb/GaAsSb/GaAs three quantum wells laser is equal to 83 mA and 0.62W/A. When the current is over 93 mA, external efficiency will reach 0.72. In order to further enhance the performance of InGaAsSb/GaAsSb quantum well (QW) laser, the asymmetric (0.5 μm/1.5 μm) waveguide structure is also studied.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ning An, Zhipeng Wei, Xuan Fang, Guojun Liu, Xiaohui Ma, "Optimization of 1300 nm quantum well laser on GaAs substrates", Proc. SPIE 9294, International Symposium on Optoelectronic Technology and Application 2014: Development and Application of High Power Lasers, 92940W (9 December 2014); doi: 10.1117/12.2071603; https://doi.org/10.1117/12.2071603
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

Simulation of 1.3-µm AlGaInAs/InP strained MQW lasers
Proceedings of SPIE (January 20 2005)
GaSb based 1.9 to 2.4 µm quantum well diode...
Proceedings of SPIE (April 01 2005)
SC DHS InGaAsP InP lasers( =1.5 1.6 um) with above...
Proceedings of SPIE (June 11 2003)
Simulation of GaInP laser diode structure
Proceedings of SPIE (June 06 1997)

Back to Top