9 December 2014 Optimization of 1300 nm quantum well laser on GaAs substrates
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Abstract
The high-performance InGaAsSb/GaAsSb/GaAs lasers emitting 1300 nm is simulated. Compared to the type-II quantum well GaAsSb/GaAs, In0.48Ga0.52As0.98Sb0.02/GaAs0.98Sb0.22 has large bandoffset which will offer a better electron confinement. And GaAs0.98Sb0.22 can reduce the effective strain of the highly lattice mismatched InGaAsSb quantum well. The transparent carrier densities of active unit is as low as 0.72×1018 cm-3. The threshold current and slope efficiency of the InGaAsSb/GaAsSb/GaAs three quantum wells laser is equal to 83 mA and 0.62W/A. When the current is over 93 mA, external efficiency will reach 0.72. In order to further enhance the performance of InGaAsSb/GaAsSb quantum well (QW) laser, the asymmetric (0.5 μm/1.5 μm) waveguide structure is also studied.
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Ning An, Ning An, Zhipeng Wei, Zhipeng Wei, Xuan Fang, Xuan Fang, Guojun Liu, Guojun Liu, Xiaohui Ma, Xiaohui Ma, } "Optimization of 1300 nm quantum well laser on GaAs substrates", Proc. SPIE 9294, International Symposium on Optoelectronic Technology and Application 2014: Development and Application of High Power Lasers, 92940W (9 December 2014); doi: 10.1117/12.2071603; https://doi.org/10.1117/12.2071603
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