21 November 2014 CMOS compatible avalanche photodetector and its application in communications
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Abstract
CMOS compatible avalanche photodiodes (CMOS APDs) can be fabricated with standard CMOS technology, which make CMOS APDs are considered as a key optoelectronic device for optical communication systems and optical wireless communication systems. The guard-ring (GR) structure in CMOS APDs can alleviate the premature edge breakdown (PEB) effects and greatly improve the device performance. In this paper, the influence of various type GR structure on CMOS APDs performance are discussed, and its important applications in radio-over-fibre (RoF) are reviewed.
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Miangang Tang, Zhigang Wu, Guohui Li, "CMOS compatible avalanche photodetector and its application in communications", Proc. SPIE 9296, International Symposium on Optoelectronic Technology and Application 2014: Advanced Display Technology; Nonimaging Optics: Efficient Design for Illumination and Solar Concentration, 929605 (21 November 2014); doi: 10.1117/12.2071179; https://doi.org/10.1117/12.2071179
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