Translator Disclaimer
Paper
15 August 1988 High Detectivity D* = 1.0 X 10 10 cm√Hz/W GaAs/AlGaAs Multiquantum Well λ = 8.3 µm Infrared Detector
Author Affiliations +
Abstract
We report the first high detectivity, (D* = 1.0 X 1010 cm √Hz/W), high responsivity (Rv = 30,000 V/W), GaAs/A1),Gai_xAs multiquantum well detector, sensitive in the long wavelength infrared band (LWIR) at λ = 8.3 μm (operating at a temperature of T = 77K). Due to the mature GaAs growth and processing technologies as well as the potential for monolithic integration with high speed GaAs FETs, large focal plane arrays of these detectors should be possible.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B F Levine, C G Bethea, G Hasnain, J Walker, and R J Malik "High Detectivity D* = 1.0 X 10 10 cm√Hz/W GaAs/AlGaAs Multiquantum Well λ = 8.3 µm Infrared Detector", Proc. SPIE 0930, Infrared Detectors and Arrays, (15 August 1988); https://doi.org/10.1117/12.946632
PROCEEDINGS
11 PAGES


SHARE
Advertisement
Advertisement
Back to Top