15 August 1988 InAsSb Strained-Layer Superlattices: A New Class Of Far Infrared Materials
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The physical properties of InAsSb strained-layer superlattices are reviewed. After a brief description of the band structure and superlattice growth and characterization, we present infrared absorption results and demonstrate the first device made from these materials, a p-n junction photodiode. From these studies, we find that these new materials can be designed to absorb out into the far infrared, well beyond the bandgap of any bulk III-V material. The prototype, non-optimized photodiode displayed a detectivity at 7 pm that is within one order of magnitude of the detectivity of the best HgCdTe detectors at that wavelength.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S R Kurtz, S R Kurtz, L R Dawson, L R Dawson, R M Biefeld, R M Biefeld, G C Osbourn, G C Osbourn, } "InAsSb Strained-Layer Superlattices: A New Class Of Far Infrared Materials", Proc. SPIE 0930, Infrared Detectors and Arrays, (15 August 1988); doi: 10.1117/12.946631; https://doi.org/10.1117/12.946631

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