20 November 2014 320×256 InGaAs solid state low-light devices
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Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 930004 (2014) https://doi.org/10.1117/12.2072895
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China
Abstract
The InGaAs devices has been chosen as new candidate of solid-state low-light devices because of advantages such as wide response wavelength, high quantum efficiency, high device performance, digitalized readout, high temperature operation, high reliability and long lifetime. It has gained vital development and application in the world. 320×256 InGaAs solid-state low-light devices has been prepared and studied, the p-i-n material structure was grown by MOCVD system. The mesa device structure was chosen and fabricated by inductively coupled plasma (ICP) method. The detector chip and CMOS readout integrated circuit was bonded by flip-chip bonding. The FPAs was packaged to Dewar which temperature could be changed by temperature controller. Both performances of single element device and focal plane arrays were studied in detail. Very simple optics lens was adopted to show the imaging of 1.064μm laser spot and hand. Study results disclose feasible material growth, devices processing and high temperature operation characteristics of InGaAs devices.
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Yan-li Shi, Yan-li Shi, Qiang Lu, Qiang Lu, Rui Hu, Rui Hu, Gong-rong Deng, Gong-rong Deng, Zhu-jun Chu, Zhu-jun Chu, Long Li, Long Li, Yao-hong Qian, Yao-hong Qian, Yun-xiang Feng, Yun-xiang Feng, } "320×256 InGaAs solid state low-light devices", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 930004 (20 November 2014); doi: 10.1117/12.2072895; https://doi.org/10.1117/12.2072895
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