Molecular beam epitaxy growth of high quality InAs/GaSb type-II superlattices for long wavelength infrared detection

Fangfang Wang; Jianxin Chen; Zhicheng Xu; Yi Zhou; Qingqing Xu; Li He

doi:10.1117/12.2068276

20 November 2014 Molecular beam epitaxy growth of high quality InAs/GaSb type-II superlattices for long wavelength infrared detection

Fangfang Wang, Jianxin Chen, Zhicheng Xu, Yi Zhou, Qingqing Xu, Li He

Author Affiliations +

Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 930008 (2014) https://doi.org/10.1117/12.2068276
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

InAs/GaSb superlattices are excellent candidates for the third-generation long-wave infrared and very-long-wave infrared photodetectors due to their special energy structure and theoretical advantages. To realize their inherent potential, however, superlattice materials with low defect density and improved device characteristics must be demonstrated. Here we report on the demonstration of highperformance PBπN photodiodes based on type-II InAs/GaSb superlattices with full cut-off wavelength ~ 13.0 μm operating at 77 K. Samples with migration-enhanced epitaxy for interface layers were grown by molecular beam epitaxy on GaSb substrates and characterized by high-resolution X-ray diffraction and atomic force microscopy. The FWHM of the 1^st-order X-ray diffraction satellite peak of the absorption layers was only 21.6". The average roughness from AFM on a 2×2 μm²scan area was less than 0.15 nm. Optical and electrical measurements of the photodiodes revealed high uniformity of the type-II superlattice materials. Across the wafer, the detector structure showed a full cut-off wavelength of 13.0 μm at 77 K. The dark current density at -50 mV was 5.1×10^-4 A/cm²and the maximum resistance-area product (R_maxA) was 128.5 Ω cm².

Citation Download Citation

Fangfang Wang, Jianxin Chen, Zhicheng Xu, Yi Zhou, Qingqing Xu, and Li He "Molecular beam epitaxy growth of high quality InAs/GaSb type-II superlattices for long wavelength infrared detection", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 930008 (20 November 2014); https://doi.org/10.1117/12.2068276

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