First-principles study on the effects of the intrinsic defects in GaAs saturable absorber

Xiaoyang Ma; Dechun Li; Shengzhi Zhao; Wen Cong; Guiqiu Li; Kejian Yang

doi:10.1117/12.2069808

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20 November 2014 First-principles study on the effects of the intrinsic defects in GaAs saturable absorber

Xiaoyang Ma; Dechun Li; Shengzhi Zhao; Wen Cong; Guiqiu Li; Kejian Yang

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Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 930009 (2014) https://doi.org/10.1117/12.2069808
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

First-principles calculations are performed for the effects of the intrinsic defects in GaAs saturable absorber, using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional to correct the band gap. The defect energy levels corresponding to all point defects and their electrical characteristics are analyzed from the aspects of density of states and band structures. Furthermore, the partial band decomposed charge density of the defect bands are also been studied. The relationships between defect energy levels and EL2 deep-level defect will be helpful in ascertaining the origin of the EL2 deep-level defect in GaAs.

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Xiaoyang Ma, Dechun Li, Shengzhi Zhao, Wen Cong, Guiqiu Li, and Kejian Yang "First-principles study on the effects of the intrinsic defects in GaAs saturable absorber", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 930009 (20 November 2014); https://doi.org/10.1117/12.2069808

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