20 November 2014 Study of the ICP etching process on InGaAs/InP array devices
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Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93000Q (2014) https://doi.org/10.1117/12.2071022
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China
Abstract
It was very different between the etching rate of large patterns and narrow grooves on InGaAs/InP materials by inductively coupled plasma (ICP) technology. With the aim of high etching rate, good morphology, smooth interfaces and fewer defects, the etching mechanisms of ICP via changing gas flow rate, chamber pressure and RF power have been analyzed. Some recipes have been found to achieve a narrow stripe and deep groove with good uniformity, interface and morphology via high etching rate and good selectivity. The different phenomena during etching the large patterns and narrow grooves have been explained and the sets of parameters have been summarized that is adapted to the array device on InGaAs/InP materials during the ICP process.
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Xiaochen Niu, Xiaochen Niu, Jun Deng, Jun Deng, Yanli Shi, Yanli Shi, Ying Tian, Ying Tian, Deshu Zou, Deshu Zou, } "Study of the ICP etching process on InGaAs/InP array devices", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93000Q (20 November 2014); doi: 10.1117/12.2071022; https://doi.org/10.1117/12.2071022
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