20 November 2014 Study on inductively coupled plasma etching induced damage of InSb
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Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93001F (2014) https://doi.org/10.1117/12.2071936
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China
Abstract
InSb is an important Ⅲ-Ⅴnarrow gap compound semiconductor material. It is widely used in optoelectronic devices manufacture especially mid-wave infrared detectors. With the application of ICP etching in large-scale InSb IRFPA detectors fabrication process, the influence of ICP etching induced damage on InSb IRFPA devices has been paid more attention. Surface states which reflect the characteristics of semiconductor surface play an important role in the study on etching damage of semiconductor materials. In this paper, the surface state density on three InSb samples: one sample without etching, one sample etched by ICP and another sample wet etched by lactic acid/nitric acid etchant after ICP etching, is tested and calculated by quasi-static C-V method. The characterization and removal of ICP etching induced damage are investigated. Furthermore, the method of testing and calculating the distribution of surface state density has been presented detailedly in this paper. This work plays a significant role in the development of large-scale InSb IRFPA detectors.
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Liwen Wang, Liwen Wang, Junjie Si, Junjie Si, Guodong Zhang, Guodong Zhang, Caijing Cheng, Caijing Cheng, Dongfeng Geng, Dongfeng Geng, "Study on inductively coupled plasma etching induced damage of InSb", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001F (20 November 2014); doi: 10.1117/12.2071936; https://doi.org/10.1117/12.2071936
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