20 November 2014 Polarization-independent broadband absorption enhancement of thin-film InGaAs photodetector
Author Affiliations +
Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93001H (2014) https://doi.org/10.1117/12.2072158
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China
Abstract
The trade-off between the enhanced signal-to-noise ratio and reduced light absorption in thin-film photodetectors is the main issue for improving device performance. Nanoscale patterning of metal/dielectric interface can couple incident light into surface plasmon polaritons (SPPs) modes, leading to the enhanced absorption. However, due to the nature of resonant excitation of SPPs, it is difficult to realize broadband absorption enhancement. In this study, we propose a novel device structure to achieve absorption enhancement over the whole spectral response range of the thin-film In0.53Ga0.47As photodetector. Numerical simulation shows that both the preferential forward scattering of InP cylinder and grating coupled waveguide modes contribute to the broadband absorption enhancement.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong Fu, Jietao Liu, Binzong Xu, Yun Xu, Guofeng Song, Xin Wei, "Polarization-independent broadband absorption enhancement of thin-film InGaAs photodetector", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001H (20 November 2014); doi: 10.1117/12.2072158; https://doi.org/10.1117/12.2072158
PROCEEDINGS
5 PAGES


SHARE
Back to Top