A theoretical estimation model of response speed for photovoltaic HgCdTe infrared detectors

Xiao Wang; Zelin Shi

doi:10.1117/12.2072435

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20 November 2014 A theoretical estimation model of response speed for photovoltaic HgCdTe infrared detectors

Xiao Wang; Zelin Shi

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Proceedings Volume 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications; 93001P (2014) https://doi.org/10.1117/12.2072435
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

Doping concentration is the key factor affecting the performance of infrared detectors. Based on photovoltaic HgCdTe infrared photodetectors, in order to compute the response speed in engineering applications precisely and fastly, a theoretical estimation model is proposed. At first, according to continuity equation of PN junctions that are radiated by infrared radiation, the mechanism of PN junctions in a typical working situation is analyzed and an approximate solving method is established, which shows the analytic expression of the relationship between the response speed of photovoltaic infrared photodetectors and the doping concentration s. Then the response speed of photovoltaic HgCdTe infrared photodetectors is compared to that of photoconductive photodetectors. In the end, the error of the estimation model is checked, which is done through numerical analysis. The results indicate that the response speed rises with the doping concentration increasing as the error increases, the estimation model proposed brings the maximum error of 5.9%, if the doping concentration is 10²¹per cubic centimeter.

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Xiao Wang and Zelin Shi "A theoretical estimation model of response speed for photovoltaic HgCdTe infrared detectors", Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 93001P (20 November 2014); https://doi.org/10.1117/12.2072435

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