Thinned Backside Illuminated CCDs For Ultraviolet Imaging

C. Tassin; Y. Thenoz; J. Chabbal

doi:10.1117/12.946905

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16 August 1988 Thinned Backside Illuminated CCDs For Ultraviolet Imaging

C. Tassin, Y. Thenoz, J. Chabbal

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Proceedings Volume 0932, Ultraviolet Technology II; (1988) https://doi.org/10.1117/12.946905
Event: 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, 1988, Orlando, FL, United States

Abstract

This paper presents the first results obtained at Thomson-CSF on thinned CCDs (576 x 384 pixels) developed for ultraviolet imaging. The process involves chemical thinning of the CCD down to about 10 microns, followed by a shallow implantation (p⁺ for backside accumulation) activated by laser annealing. UV quantum efficiencies as high as 20 % are measured at 2540 A despite an absorption length in silicon of 55 A at this wavelength. Measurements under 5.9 keV (Fe⁵⁵) X-ray irradiation have shown 295 eV FWHM energy resolution. After optimization of various parameters in the backside treatment, this technology will in course be applied to several sensors : 1024 x 1024 and buttable devices.

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C. Tassin, Y. Thenoz, and J. Chabbal "Thinned Backside Illuminated CCDs For Ultraviolet Imaging", Proc. SPIE 0932, Ultraviolet Technology II, (16 August 1988); https://doi.org/10.1117/12.946905

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