Paper
3 March 2015 Red-emitting external cavity diode laser with high slope efficiency and narrow bandwidth
Jiyeon Park, Hong Joo Song, Hong Man Na, Jun Ho Lee, Ilgu Yun
Author Affiliations +
Abstract
External cavity diode laser with broad-area laser diode is operated up to the output power of 160 mW at the injection current of 850 mA and the bandwidth of 80 pm at a wavelength of 648 nm in external cavity. High slope efficiency of output power and narrow bandwidth using broad-area laser (BAL) diode, the width of active layer in the slow axis is too broad to select a specific wavelength. In this paper, more efficient wavelength selection method is investigated by confirming the tendency of grating grooves and designing to set up the wavelength dispersion direction along the fast axis of a solitary laser diode (LD) geometrically. Thus, the tunable external cavity diode laser module by using BAL diode is designed with an overall size of 49 mm x 52 mm x 48.5 mm. From injection current in the range of 650-900 mA, ECDL showed excellent wavelength locking behavior without a non-shift of the peak wavelength. Here, the tuning range is 4 nm with maintaining the narrow bandwidth of 80 pm and up to the output power of 100 mW. A side-mode-suppression of 36.5dB is also achieved at the output power of 160 mW and the injection current of 850 mA.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jiyeon Park, Hong Joo Song, Hong Man Na, Jun Ho Lee, and Ilgu Yun "Red-emitting external cavity diode laser with high slope efficiency and narrow bandwidth", Proc. SPIE 9343, Laser Resonators, Microresonators, and Beam Control XVII, 93431M (3 March 2015); https://doi.org/10.1117/12.2079838
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Diodes

Diffraction gratings

Polarization

Reflection

Collimation

Diffraction

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