Paper
20 February 2015 760nm: a new laser diode wavelength for hair removal modules
Martin Wölz, Martin Zorn, Agnieszka Pietrzak, Alex Kindsvater, Jens Meusel, Ralf Hülsewede, Jürgen Sebastian
Author Affiliations +
Abstract
A new high-power semiconductor laser diode module, emitting at 760 nm is introduced. This wavelength permits optimum treatment results for fair skin individuals, as demonstrated by the use of Alexandrite lasers in dermatology. Hair removal applications benefit from the industry-standard diode laser design utilizing highly efficient, portable and light-weight construction. We show the performance of a tap-water-cooled encapsulated laser diode stack with a window for use in dermatological hand-pieces. The stack design takes into account the pulse lengths required for selectivity in heating the hair follicle vs. the skin. Super-long pulse durations place the hair removal laser between industry-standard CW and QCW applications. The new 760 nm laser diode bars are 30% fill factor devices with 1.5 mm long resonator cavities. At CW operation, these units provide 40 W of optical power at 43 A with wall-plug-efficiency greater than 50%. The maximum output power before COMD is 90 W. Lifetime measurements starting at 40 W show an optical power loss of 20% after about 3000 h. The hair removal modules are available in 1x3, 1x8 and 2x8 bar configurations.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Wölz, Martin Zorn, Agnieszka Pietrzak, Alex Kindsvater, Jens Meusel, Ralf Hülsewede, and Jürgen Sebastian "760nm: a new laser diode wavelength for hair removal modules", Proc. SPIE 9346, Components and Packaging for Laser Systems, 934608 (20 February 2015); https://doi.org/10.1117/12.2077445
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Pulsed laser operation

Continuous wave operation

Skin

Diodes

Resistance

Alexandrite lasers

RELATED CONTENT

Thermal properties of InGaN laser diodes and arrays
Proceedings of SPIE (March 04 2013)
Highly reliable high power AlGaAs GaAs 808 nm diode laser...
Proceedings of SPIE (February 19 2007)
Newly developed high-power laser diode bars
Proceedings of SPIE (February 08 2012)
Reliability of high-power multimode pump modules
Proceedings of SPIE (June 01 2004)

Back to Top